在(zai)光(guang)學類激光(guang)切割的加(jia)工(gong)中(zhong),產(chan)品(pin)的內汙率(lv)壹(yi)直(zhi)是(shi)影響(xiang)產(chan)品(pin)良(liang)率(lv)的瓶(ping)頸(jing).目(mu)前(qian)需要解決(jue),只(zhi)能(neng)通(tong)過(guo)切割加(jia)工(gong)後(hou)人工擦(ca)拭(shi)的方(fang)式(shi).效率(lv)低(di)下且(qie)人工成(cheng)本高.

        超越者SLC-M為壹臺(tai)專(zhuan)為光(guang)學類薄膜(mo)而設計的壹(yi)款(kuan)設備(bei),早(zao)在(zai)10多年(nian)前(qian)即(ji)已(yi)用於對偏(pian)光(guang)片的切(qie)割.其(qi)獨特(te)的3D立(li)體(ti)排煙(yan)系(xi)統(tong)更是(shi)獨(du)有(you)設計.

 

        壹般激光(guang)機(ji)只(zhi)有(you)後(hou)吸及下吸,下吸壹般為平(ping)臺(tai)真(zhen)空(kong)的作(zuo)用,在(zai)半切(qie)工藝中基(ji)本不(bu)會有排(pai)塵(chen)的效(xiao)果,而後(hou)吸則是(shi)吸風(feng)口(kou)統(tong)壹安(an)排(pai)在(zai)設備(bei)的後(hou)端,切割後(hou)產(chan)生(sheng)的粉(fen)塵會經過(guo)產(chan)品(pin)面才能排(pai)除(chu),在(zai)排塵(chen)過程(cheng)中(zhong),部分(fen)較重(zhong)顆粒會落(luo)到(dao)產(chan)品(pin)平(ping)面中,從(cong)而在(zai)後(hou)續的貼(tie)合過程(cheng)中(zhong)導(dao)致內汙率(lv)較(jiao)高.

        而超越者SLC-M則再此基(ji)礎(chu)上增加(jia)跟(gen)隨(sui)式(shi)上吸風(feng),切(qie)割產(chan)生(sheng)的粉(fen)塵會即(ji)時(shi)通(tong)過(guo)上吸風(feng)煙(yan)道排(pai)除(chu)出設備(bei)外,從(cong)而達到(dao)排塵(chen)的效(xiao)果.經客(ke)戶實(shi)際(ji)驗證,使(shi)用上(shang)吸風(feng)系(xi)統(tong)後(hou),產(chan)品(pin)的內汙率(lv)由(you)原來的2.08%降(jiang)低到(dao)0.65%.